当前位置: 首页  >  师资队伍  >  在职教职工  >  讲师  >  衡成林

讲师

姓名:衡成林
所在学科:物理学院
职称:副教授
联系电话:15010535024,86-10-68914027
E-mail:hengcl@bit.edu.cn
通信地址:北京市海淀区中关村南大街5号 北京理工大学物理学院

个人简历

  1990-1994年江苏省苏州大学物理系学习,获得物理教育学士学位;

  1994-1997年江苏省苏州大学物理科学与技术学院学习,获凝聚态物理硕士学位。导师:姚伟国教授;

  1997-2000年北京大学物理系学习,2000年6月获得理学博士学位。导师:秦国刚院士

工作经历

  2000年9月-2002年9月 新加坡-MIT联盟(新加坡国立大学电子工程系)博士后,2001年转为ResearchFellow;导师:A/P Weekiong Choi and A/P Waikim Choi

  2003年3月-2005年7月 挪威奥斯陆大学物理系博士后;导师:Prof. Terje G. Finstad

  2006年2月-2008年4月 加拿大McMaster大学工程物理系博士后;Prof. Peter Mascher

  2008年12月-2017年8月 北京理工大学理学院(现物理学院),讲师;

  2017年9月-现在北京理工大学物理学院,副教授

科研方向

  研究领域:硅基纳米半导体的制备、表征和发光;稀土掺杂纳米半导体材料发光;纳米半导体材料电荷存储性质;利用正电子湮灭谱(PAS)探测掺杂氧化物结构等。

  主要研究方向和兴趣:

  1.稀土掺杂氧化锌基底的结构和发光性质;

  2.利用“稀土离子对”的下转换发光调制太阳光谱,提高硅基太阳能电池的发光效率;

  3.利用氧化石墨烯、ZnO纳米晶等作为药物载体,研究其在生物/医学等方面的应用;

  4.硅基纳米半导体(硅、锗、砷化镓等)的制备、发光和电荷存储性质。

学术成就

  1.在国际上首次报道了含锗(Ge)纳米晶MIS结构的电荷存储性质,成果发表在APL上,分别被引用133次和50次;

  2.首次研究报道了Ge纳米晶和稀土铒离子共掺杂氧化硅薄膜的发光性质,成果被APL审稿人评为“优秀”,被引用36次;

  3.提出富硅氧化硅中纳米硅颗粒的形成机制,文章发表在JCG上被引用23次;采用电子束蒸发镀膜+快速退火制备Ge纳米晶,研究了Ge纳米晶的形成机制和电荷存储性质,成果总共被引用42次;

  4.深入研究了功能化氧化锌纳米晶在生物医学方面的应用,增强了其对肿瘤细胞的毒性。

       研究基金有:国家自然基金(面上)、教育部留学回国启动基金、教育部博士点新教师基金、学校基础科研基金等。

  主要研究工作

  1.C. L. Heng, W. Xiang, W. Y. Su, H. C. Wu, Y. K. Gao, P. G. Yin and T. G. Finstad, “Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing”, Opt. Mater. Express 7(8), 3041-3050(2017).

  2.C. L. Heng, T. Wang, W. Y. Su, H. C. Wu, M. C. Yang, L. G. Deng, P. G. Yin and T. G. Finstad, “Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films after high temperature annealing”, J. Alloy Compd. 695, 2232-2237 (2017).

  3.C. L. Heng, T. Wang, W. Y. Su, H. C. Wu, P. G. Yin and T. G. Finstad, "Down-conversion luminescence from (Ce, Yb) co-doped oxygen-rich silicon oxides", J. Appl. Phys. 119, 123105 (2016).

  4.C. L. Heng, T. Wang, H. Li, J. J. Liu, J. W. Zhu, A. Ablimit, W. Y. Su, H. C. Wu, P. G. Yin and T. G. Finstad, "Strong enhancement of ultra-violet emission by Ce doping of ZnO sputtered films", Material Letters 162, 53 (2016).

  5.H.-C. Wu, M. Abid, Y.-C. Wu, C. Ó. Coileáin, A. Syrlybekov, J. F. Han, C. L. Heng, H. J. Liu, M. Abid, I. Shvets, "Enhanced Shubnikov-de Hass Oscillation in Nitrogen-Doped Graphene", ACS Nano 9, 7207 (2015).

  6.A. Syrlybekov, H.-C. Wu, O. Mauit, Y.-C. Wu, P. Maguire, A. Khalid, C. Ó Coileáin, L. Farrell, C. L. Heng, M. Abid, H. J. Liu, H.-Z. Zhang, I. V. Shvets, "Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects", Nanoscale 7, 14055 (2015),

  7.Z. Han, X. H. Wang, C. L. Heng*, Q. S. Han, S. F. Cai, J. Y. Li, C. Qi, W. Liang, R. Yang, and "C. Wang, "Synergistically enhanced photocatalytic and chemotherapeutic effects of aptamer-functionalized ZnO nanoparticles towards cancer cells", Phys. Chem. Chem. Phys. 2015, 17, 21576. (第一作者韩宙为本人硕士生,通讯作者)

  8.C.L. Heng, J. T. Li, W. Y. Su, P. G. Yin and T. G. Finstad, "The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing, J. Appl. Phys.117, 043101 (2015).

  9.C. L. Heng, J. T. Li, W. Y. Su, Z. Han, P. G. Yin, T. G. Finstad, "The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing", Optical Materials 42 (2015) 17-23.

  10.C.L. Heng, W.Y. Su, Q. W. Zhang, X. Q. Ren, P. G. Yin, H. P. Pan, S. D. Yao and T. G. Finstad, “The photoluminescence from (Eu, Yb) co-doped silicon-rich oxides, J. Luminescence 154, 339 (2014).

  11C. L. Heng, J.T.  Li, Z. Han and P. G. Yin, “An Abnormal Photoluminescence Enhancement in (Eu, Yb) Co-doped SiO2 Thin Film”, Integrated Ferroelectrics, Vol. 151, 179-186, 2014.

  12.Zhang Xiao, Yang Rong, Wang Chen, Heng Chenglin*, “Cell Biocompatibility of Functionalized Graphene Oxide”, Acta Phys Chim Sin, 28 (06): 1520-1524 (2012). (第一作者张晓为本人硕士生,通讯作者)。

  13.Jing Li,Othman Zalloum,Tyler Roschuk,Chenglin Heng, Jacek Wojcik, and Peter Mascher, “ The formation of light emitting cerium silicates in cerium-doped silicon oxides’, Appl. Phys. Lett. 94, 011112 (2009).

  14.C. L. Heng, E. Chelomentsev, Z. L. Peng, P. Mascher, and P. J. Simpson, "Photoluminescence and positron annihilation spectroscopy investigation on (Er, Ge) co-doped Si oxides deposited by magnetron sputtering", J. Appl. Phys. 105, 014312(2009).

  15.C.L. Heng, O. H. Y. Zalloum, E. Chelomentsev, J. Wojcik and P. Mascher, "The photoluminescence from Er-doped Si-rich Si oxides deposited by magnetron sputtering in an Ar or Ar+H2 plasma", J. Vacuum Science & Technology A,Vol. 27, 101-108, 2009.

  16.C.L. Heng, O.H. Y. Zalloum, J. Wojcik T. Roschuk, and P. Mascher, "On the effects of double-step annealing processes to control light emission from Er-doped Si-rich Si oxide", J. Appl. Phys.103, 024309, 2008.

  17.C. L. Heng, O. H. Y. Zalloum, E. Chelomentsev, and P. Mascher, "Photoluminescence from magnetron-sputtered SiO2 films co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line", Electrochemistry Society Trans. Vol. 6, (3) 549-559, 2007.

  18.J. Mayandi, T.G. Finstad,C.L. Heng, S. Foss, H. Klette, ”Infrared electroluminescence from a Si MOS structure with Ge in the oxide", J. LUMINESCENCE, 127, 362-366, 2007.

  19.C.L. Heng, O.H. Y. Zalloum, T. Roschuk, D. Blakie, J. Wojcik and P. Mascher, "Photoluminescence studies for an Er-doped Si-rich SiOx film: effects of annealing gas ambients and double-step processes", Electrochemistry and Solid-State Letters, Vol. 10, K20-K23, 2007.

  20.C.L. Heng, Y.J. Li, J. Mayandi, T.G. Finstad, S. Jørgensen,A.E. Gunnæs,P. Storås,A. Olsen, ”A study on the precipitation of Ge-rich nano-particles in a luminescent (Er, Ge) co-doped SiO2 film sputtered with Ar+O2 plasma”, International journal of Nanoscience, vol. 5 (4-5) 493, 2006.

  21.C.L. Heng, T.G. Finstad, P. Storås, A.E. Gunnæs, and Y.J. Li, ”Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing”, Microelectronics Journal, vol. 36 (3-6)531-535, 2005.

  22.C.L. Heng, T.G. Finstad, P. Storås, A.E. Gunnæs, Y.J. Li and O. Nilsen, “Photoluminescence properties from Er-doped germanium rich SiO2 film”, APPL PHYS LETT85 (19): 4475-4477 NOV 8, 2004.

  23.C.L. Heng, and T.G. Finstad, “Electrical characteristics of a mental-insulator-semiconductor memory structure containing germanium nanocrystals”, PHYSICA E, Vol. 26 (1-4):386-390, 2005.

  24.C.L. Heng, Y.J. Liu, A.T.S. Wee, and T.G. Finstad, “The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effect”, J Crystal Growth, 262 (1-4): 95-104, 2004.

  25.C.L. Heng, W.W. Tjiu, and T.G. Finstad, “Charge storage effects in a metal-insulator-semiconductor structure containing germanium nanocrystals fabricated by rapid thermal annealing of an electron-beam evaporated germanium layer”, Applied Physics A: Materials Science & Processing, rapid communication, Vol. 78, 1181-1186, 2004.

  26.C. L. Heng, L. W. Teo, Vincent Ho, M. S. Tay, Y. Lei, W. K. Choi and W. K. Chim, “Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure”,Microelectronic engineering, Volume 66, Issues 1-4, Pages 218-223, April 2003.

  27.L.W. Teo, W.K. Choi, W.K. Chim, V. Ho, M.S. Tay, C.L. Heng, Y. Lei, D.A. Antoniadis, and E.A. Fitzgerald, “Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure”, APPL PHYS LETT 81 (19): 3639-3641 NOV 4 2002.

  28.Choi WK, Chim WK, Heng CL, et al. ”Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure”, APPL PHYS LETT 80 (11): 2014-2016 MAR 18 2002.

  29.Heng CL, Chen Y, Ma ZC, Qin GG,“Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure”, J APPL PHYS 89 (10): 5682-5686 MAY 15 2001.

  30.Heng CL, Sun YK, Qin GG. ”Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias”, APPL PHYS LETT 77 (10): 1416-1418 SEP 4 2000.

  31.Sun YK, Heng CL, Qin GG,"Electroluminescence from Au/(SiO2/Si/SiO2) nanoscale double-barrier/n(+)-Si structure”, ACTA PHYS SIN-CH ED 49 (7): 1404-1408 JUL 2000.

  32.You LP, Heng CL, Ma SY, QinGG. ”Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films”, J CRYST GROWTH 212 (1-2): 109-114 APR 2000.

  33.Qin GG, Heng CL, Bai GF, et al. ”Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si”, APPL PHYS LETT 75 (23): 3629-3631 DEC 6 1999.

  34.Heng CL, Zhang BR, Qiao YP, Qin GG. "Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices”, PHYSICA B 270 (1-2): 104-109 OCT 1999.

  35.姚伟国,陈贵宾,衡成林,吴雪梅,“GaAs颗粒镶嵌薄膜的制备及光吸收特性的研究”,功能材料与器件学报,Vol.3, 1997.