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物理学院“博约学术论坛"系列报告(第99期)

发布日期:2017年01月09日

题目:Ab initio carrier dynamics and charge transport in semiconductors
报告人:周金健 博士 加州理工学院
时 间:2017年1月11日(周三)下午14:30
地 点:北京理工大学中心教学楼610
摘要:
In polar semiconductors and oxides, the long-range nature of the electron-phonon interaction is a bottleneck to compute charge transport from first principles. In this talk, I will present an efficient ab initio scheme to compute and converge the electron-phonon relaxation times and electron mobility in polar materials. We applied our approach to GaAs, where using the Boltzmann equation with state-dependent relaxation times, we computed mobilities in excellent agreement with experiment. I will also show real-time simulations of hot carrier relaxation in GaN from first-principles.