Faculty Profiles

Linfeng Sun
Title: Professor,
Tel:
Department: Department of Condensed-Matter Physics
E-mail: sunlinfeng@bit.edu.cn
Address: Science Building, South District, Liangxiang Campus, Beijing Institute of Technology
Education
2011–2015 School of Physical and Mathematical Science, Nanyang Technological University Ph.D. (Chinese Government Award for Outstanding Students Abroad, OCPA-APS Outstanding Conference Poster Award: First-place) 2008–2010 School of Science, Zhejiang University M.S. (Awarded by ASML scholarship, First-Class Scholarship, Outstanding Graduate Students, etc.)
Professional experience
2021-now Beijing Institute of Technology Professor (New Rising Star in Science and Technology of China in 2021) 2018–2021 Sungkyunkwan University Research Professor (Korean Research Fellowship) 2017–2018 Sungkyunkwan University Postdoctoral Fellow 2016–2017 Singapore University of Technology and Design Postdoctoral Fellow
Research Interests
Mainly focus on the regulation of physical properties in quantum functional materials (quantum two-dimensional materials, quantum topological materials, etc.) for in-memory computing devices and their applications in neuromorphic computing devices, including: (1) Design and fabrication of device based on quantum functional materials/heterojunction; (2) Design and mechanism study of various in-memory computing devices; (3) Design and development of physical prototype of artificial intelligent neuromorphic chip; (4) Machine learning and application based on artificial neural network;
Publications
Selected Publications
Prof. Sun has focused on the regulation of physical properties in quantum functional materials, device physics for in-memory computing devices, and their applications in neuromorphic computing, and has achieved a series of important innovative research results. For example: (1) Realization of neuromorphic synaptic computing based on quantum semiconductor materials for sound localization in human brain; (2) Design and development of large scale device array for high data storage capacity based on the heterojunctions of quantum functional material; (3) In-sensor reservoir computing based on defect engineering of quantum functional materials for intelligent language learning; (4) The advantages of in-memory computing device array based on quantum materials in dealing with complex combinatorial optimization problems, etc. So far, Prof Sun has published more than 50 SCI papers in high-level international journals, and Prof. Sun’s representative works as the first author/corresponding author include: Science Advances, Nature Communication, Physics Review Letters, Nano Letters, Advanced Materials, Advanced Functional Materials, Nano Energy, etc. Prof. Sun has been invited to write review paper for the well-known domestic and foreign journals like Advanced Intelligent System, Nanotechnology, Chips, Acta Physica Sinica, etc. The total citations have been more than 2,800 times, and 4 patents have been authorized.
(1) Xi Chen, Dongliang Yang, Geunwoo Hwang, Yujiao Dong, Wenqi Zhang, Huihan Li, Ruiwen Shao, Yugui Yao, Linfeng Sun*, Zhongrui Wang*, Heejun Yang*, Oscillatory Ising Machine using Two-Dimensional Memristors, Advanced Materials, under review (Co-Corresponding Author) (Invited Paper)
(2) Eunah Kim, Geunwoo Hwang, Dohyun Kim, Dongyeun Won, Yanggeun Joo, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Pilkyung Moon, Dong-Wook Kim, Linfeng Sun*, Heejun Yang*, Orbital gating driven by giant Stark effect in tunneling phototransistors, Advanced Materials, 2106625. (Co-Corresponding Author)
This work firstly shows the high-performance tunneling photodetectors using the giant stark effect in low-dimensional materials.
(3) Bai Sun, Guangdong Zhou, Linfeng Sun, Hongbin Zhao, Yuanzheng Chen, Feng Yang, Yong Zhao and Qunliang Song*, ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing, Nanoscale Horiz, 2021, 6, 939-970. (Co-first Author)
(4) Linfeng Sun, Zhongrui Wang, Jinbao Jiang, Yeji Kim, Bomin Joo, Shoujun Zheng, Seungyeon Lee, Woo Jong Yu, Baisun Kong, Heejun Yang*, In-sensor reservoir computing for language learning via two dimensional memristors, Science Advances, 7(20), 2021, eabg1455.
This work is the first time to fuse the sensor, memory and computing together into the reservoir computing system, which has been widely reported by mainstream news medias outlets including Tencent News, Netease News, etc.
(5) Huihan Li, Shaocong Wang, Xumeng Zhang, Wei Wang, Rui Yang, Zhong Sun, Wanxiang Feng, Peng Lin, Zhongrui Wang*, Linfeng Sun*, Yugui Yao, Memristive crossbar arrays for storage and computing applications, Advanced Intelligent Systems, 2021, 2100017. (Invited Paper). Inside Cover. (Co-Corresponding Author)
(6) Guangdong Zhou, Bai Sun, Xiaofang Hu, Linfeng Sun, Zhou Zou, Bo Xiao, Wuke Qiu, Bo Wu, Jie Li, Juanjuan Han, Liping Liao, Cunyun Xu, Gang Xiao, Lihua Xiao, Jianbo Cheng, Shaohui Zheng, Lidan Wang, Qunliang Song, Shukai Duan, Negative photoconductance effect: An extension function of the TiOx-based memristor, Advanced Science, 8 (13), 2021, 2003765. (Co-first Author)
(7) Linfeng Sun, Wei Wang, Heejun Yang*, Recent progress in synaptic devices based on 2D materials, Advanced Intelligent Systems, 2(5), 2020, 1900167. (Invited Paper).
(8) Linfeng Sun, Genuwoo Hwang, Wooseon Choi, Gyeongtak Han, Yishu Zhang, Jinbao Jiang, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Mali Zhao, Rong Zhao, Youngmin Kim*, Heejun Yang*, Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications, Nano Energy, 69, 2020, 104472.
(9) Linfeng Sun#, Yishu Zhang#, Gyeongtak Han, Geunwoo Hwang, Jinbao Jiang, Bomin Joo, Kenji Watanable, Takashi Taniguchi, Young Min Kim, Woo Jong Yu, Bai Sun Long, Rong Zhao*, Heejun Yang*, Self-selective van der Waals hetero-structures for large scale memory array, Nature Communications, 2019, 10, 3161.
Highlighted by the 2022 Roadmap on Neuromorphic Computing and Engineering.
(10) Linfeng Sun, Hua Yu, Dong Wang, Jinbao Jiang, Dohyun Kim, Hyun Kim, Shoujun Zheng, Mali Zhao, Qi Ge, Heejun Yang*, Selective growth of monolayer semiconductors for diverse synaptic junctions, 2D Materials, 6 (2019) 015029.
(11) Canliang Zhou#, Linfeng Sun#, Fengquan Zhang, Chenjie Gu*, Shuwen Zeng*, Taojiang Jiang, Xiang Shen, Diing Shenp Ang, Jun Zhou*, Electrical tuning of the SERS enhancement by precise defect density control, ACS Applied Materials & Interfaces, 11(37) 2019, 34091.
(12) Linfeng Sun#, Yishu Zhang#, Geunwoo hwang, Jinbao Jiang, Dohyun Kim, Yonas Assefa Eshete, Rong Zhao*, Heejun Yang*, Synaptic computation enabled by Joule heating of single-layered semiconductors for sound localization, Nano Letters, 2018, 18 (5): 3229-3234.
This work firstly demonstrated synaptic computation in a single memristor using two-dimensional materials with energy consumption of ~fJ, and the sound localization was also realized based on this find.
(13) Linfeng Sun#, Wei Sun Leong#, Shize Yang, Matthew F. Chishol. Shi Jun LiANG, Lay Kee Ang, Yongjian Tang, Yunwei Mao, Jing Kong*, Huiying Yang*, Concurrent synthesis of high-performance monolayer transition metal disulfides, Advanced Functional Materials, 2017, 27(15): 1605896.
Collaborating with Prof Kong Jing’s group in MIT, this work firstly proposed a technique of concurrent synthesis method based on the eddying effect between the adjacently vertical substrates.
(14) Linfeng Sun, Hailong Hu, Da Zhan*, Jiaxu Yan, Lei Liu, Poosie Lee, Zexiang Shen*, Plasma modified MoS2 nanoflakes for surface enhanced Raman scattering, Small, 10 (2014), 6, 1090.
(15) Linfeng Sun#, Jiaxu Yan#, Da Zhan*, Lei Liu, Hailong Hu, Hong Li, Benkang Tay, Jer Lai Kuo, Chung Che Huang, Daniel W. Hewak, Pooi See Lee, Zexiang Shen*, Spin-orbit splitting in single layer MoS2 revealed by triply resonant Raman scattering, Physical Review Letter, 2013, 111(12): 126801.
This work firstly proposed that the triply resonant Raman spectrum could be used to reveal the spin-orbit splitting in single-layer MoS2. Highlighted by Nature Nanotechnology, Chemical Society Review, etc.
Representative Conferences
(1)The 2nd International Conference on Flexible & Printed Optoelectronic Materials and Devices, July, 2022. Invited Talk.
(2)International Conference on Frontier Materials, May, 2022. Invited Talk.
(3)PhotonIcs and Electromagnetics Research Symposium, April, 2022. Invited Talk.
(4)The 13th International Photonics and OptoElectronics Meetings, November, 2021. Invited Talk.
(5)IEEE Optoelectronics Global Conference (OGC), Shenzhen, China, August, 2021. Invited Talk.
(6)Optoelectronic and Optoelectronic Materials Development Forum, July, 2021. Invited Talk.
(7)The 23th Semiconductor Physics Conference, Xian, Shanxi, China, July, 2021. Invited Talk.
(8)The 1st Applied Physics Conference, Liyang, Jiangsu, China, April, 2021. Invited Talk.
(9)The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment, South Korea, December, 2020.
(10)International Conference on Display Technology, Wuhan, China, October, 2020. Invited Talk.
Academic Public Services
(1)Editorial Member, “Nano-Micro Letters”, Impact Factor: 23.655.
(2)Youth Editor, “SmartMat”, and “The Innovation”
(3)Guest Editor, Micromachines. Impact Factor: 3.523, Frontier in Neuroscience. Impact Factor: 5.152.
Reviewer for International famous journals: Science Advance, Advanced Materials, ACS Nano, Nano Letters, Nano-Micro Letters, Advanced Functional Materials, Small, Nanoscale, Advanced Optical Materials, Advanced Intelligent System, Nanotechnology, etc.
Positions
We are planning to recruit 2-3 master/doctoral students every year, and students with interdisciplinary backgrounds are encouraged to apply (students with major in physics, microelectronics, materials, etc.). Those who are interested in semiconductor device physics, artificial intelligence hardware and software are welcomed to join us. Please feel free to contact me if you are interested before applying. Postdoctoral positions are waiting to be filled, and outstanding young scholars with relevant experience are welcome to contact us.