当前位置: 孙林锋

正高/准聘教授/特别研究员

姓名:孙林锋
所在学科:物理学
职称:教授、博士生导师
联系电话:
E-mail:sunlinfeng@bit.edu.cn
通信地址:北京理工大学良乡校区南区理学楼

工作与教育经历

2021-01至今, 北京理工大学物理学院,教授、博士生导师

2018-01至2020-12, 韩国成均馆大学, 研究教授

  入选韩国“高丽学者”

2017-02至2017-12, 韩国成均馆大学,博士后

2016-04至2017-02,新加坡科技设计大学,博士后

2011-08至2016-04,新加坡南洋理工大学,博士

  2014年获国家优秀自费留学生奖学金

科研方向

主要从事低维量子功能材料(量子二维材料、量子拓扑材料等)的物性探索及其各类忆阻行为器件在信息存储和类脑计算上的应用,主要包括:

(1) 量子功能材料/异质结器件设计;

(2) 基于各类忆阻器件的信息存储过程设计与机理研究;

(3) 人工智能神经拟态芯片物理原型设计;

学术成就

  长期从事低维量子功能材料、器件物理及其在类脑计算和忆阻器上的应用, 并取得一系列重要的创新性研究成果。例如:(1)以量子半导体材料为基础的神经突触计算在人脑声音定位中的应用; (2)基于量子功能材料异质结的大容量信息数据存储阵列的设计与开发; (3)基于量子功能材料缺陷工程的传感器内储备池计算用于智能语言学习等。到目前为止,已在国际高水平期刊上发表SCI论文50余篇,其中第一作者/通讯作者代表作包括: Science Advances, Nature Communication, Physics Review Letters, Nano Letters, Advanced Functional Materials, Nano Energy, Small, 论文引用2000余次,专利授权4项; 并多次在国内外重要学术会议上做大会报告。

代表性研究成果

(1) Linfeng Sun, Zhongrui Wang, Jinbao Jiang, Yeji Kim, Bomin Joo, Shoujun Zheng, Seungyeon Lee, Woo Jong Yu, Baisun Kong, Heejun Yang*, In-sensor reservoir computing for language learning via two dimensional memristors, Science Advances, 7(20), 2021, eabg1455.

(2) Huihan Li, Shaocong Wang, Xumeng Zhang, Wei Wang, Rui Yang, Zhong Sun, Wanxiang Feng, Peng Lin, Zhongrui Wang*, Linfeng Sun*, Yugui Yao, Memristive crossbar arrays for storage and computing applications, Advanced Intelligent Systems, 2021, 2100017. (Invited Paper). Inside Cover. (Co-Corresponding Author)

(3) Guangdong Zhou, Bai Sun, Xiaofang Hu, Linfeng Sun, Zhou Zou, Bo Xiao, Wuke Qiu, Bo Wu, Jie Li, Juanjuan Han, Liping Liao, Cunyun Xu, Gang Xiao, Lihua Xiao, Jianbo Cheng, Shaohui Zheng, Lidan Wang, Qunliang Song, Shukai Duan, Negative photoconductance effect: An extension function of the TiOx-based memristor, Advanced Science, 8 (13), 2021, 2003765. (Co-first Author)

(4) Linfeng Sun, Wei Wang, Heejun Yang*, Recent progress in synaptic devices based on 2D materials, Advanced Intelligent Systems, 2(5), 2020, 1900167. (Invited Paper).

(5) Linfeng Sun, Genuwoo Hwang, Wooseon Choi, Gyeongtak Han, Yishu Zhang, Jinbao Jiang, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Mali Zhao, Rong Zhao, Youngmin Kim*, Heejun Yang*, Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications, Nano Energy, 69, 2020, 104472.

(6) Linfeng Sun#, Yishu Zhang#, Gyeongtak Han, Geunwoo Hwang, Jinbao Jiang, Bomin Joo, Kenji Watanable, Takashi Taniguchi, Young Min Kim, Woo Jong Yu, Bai Sun Long, Rong Zhao*, Heejun Yang*, Self-selective van der Waals hetero-structures for large scale memory array, Nature Communications, 2019, 10, 3161.

(7) Linfeng Sun, Hua Yu, Dong Wang, Jinbao Jiang, Dohyun Kim, Hyun Kim, Shoujun Zheng, Mali Zhao, Qi Ge, Heejun Yang*, Selective growth of monolayer semiconductors for diverse synaptic junctions, 2D Materials, 6 (2019) 015029.

(8) Canliang Zhou#, Linfeng Sun#, Fengquan Zhang, Chenjie Gu*, Shuwen Zeng*, Taojiang Jiang, Xiang Shen, Diing Shenp Ang, Jun Zhou*, Electrical tuning of the SERS enhancement by precise defect density control, ACS Applied Materials & Interfaces, 11(37) 2019, 34091.

(9) Linfeng Sun#, Yishu Zhang#, Geunwoo hwang, Jinbao Jiang, Dohyun Kim, Yonas Assefa Eshete, Rong Zhao*, Heejun Yang*, Synaptic computation enabled by Joule heating of single-layered semiconductors for sound localization, Nano Letters, 2018, 18 (5): 3229-3234.

(10) Linfeng Sun#, Wei Sun Leong#, Shize Yang, Matthew F. Chishol. Shi Jun LiANG, Lay Kee Ang, Yongjian Tang, Yunwei Mao, Jing Kong*, Huiying Yang*, Concurrent synthesis of high-performance monolayer transition metal disulfides, Advanced Functional Materials, 2017, 27(15): 1605896.

(11) Linfeng Sun, Hailong Hu, Da Zhan*, Jiaxu Yan, Lei Liu, Poosie Lee, Zexiang Shen*, Plasma modified MoS2 nanoflakes for surface enhanced Raman scattering, Small, 10 (2014), 6, 1090.

(12) Linfeng Sun#, Jiaxu Yan#, Da Zhan*, Lei Liu, Hailong Hu, Hong Li, Benkang Tay, Jer Lai Kuo, Chung Che Huang, Daniel W. Hewak, Pooi See Lee, Zexiang Shen*, Spin-orbit splitting in single layer MoS2 revealed by triply resonant Raman scattering, Physical Review Letter, 2013, 111(12): 126801.

邀请报告:

(1)国际技术显示大会(在线), 湖北武汉,2020年10月;

(2)韩国成均馆大学Distinguished Lecture Series,韩国水原市,2020年11月;

(3)第一届应用物理论坛, 江苏溧阳,2021年4月;

(4)华南师范大学,广东省广州市, 2021年4月;

(5)第23届全国半导体物理学术会议,陕西西安,2021年7月;

(6)第二届世界光子大会-光电子材料与器件发展论坛, 2021年7月;

学术兼职

Nano-Micro Letters, 助理编辑;

Frontiers in Materials, 客座编辑;

Frontier in Neuroscience, 客座编辑;

SmartMat, 青年编委;

招生信息

每年拟招收2-3名保送或考研研究生(硕士生、硕博连读生或博士生)、鼓励有学科交叉背景的学生报考(物理、微电子、材料等专业学生均可),欢迎有志于半导体器件物理及应用,对人工智能硬件、软件方向感兴趣的学生加盟。报考前请直接与我联系。同时可招收重点资助博后1~2人,欢迎具有相关经验的优秀青年学者联系。