2006-2010年 北京科技大学材料科学与工程学院，学士；


2010-2015年 北京大学信息科学技术学院，博士；

副教授，北京理工大学物理学院，中国，2023年-至今


副研究员/助理教授，北京理工大学物理学院，中国，2017-2023


博士后（联合），斯坦福大学电子工程系，美国，2016-2017


博士后（联合），香港理工大学应用物理系，香港，2015-2016

二维材料与电子器件

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Niu, Y., Li, Lei, Qi, Z., Aung, H., Han, X., Tenne, R., Yao, Y., Zak, A., Guo, Y.*, 0D van der Waals interfacial ferroelectricity. Nature Communications, 2023, 14, 5578
(Highlight: Ferroelectricity in zero dimensions Nature Electronics 2023, 6, 793)
Sun, Y.; Xu, Z.; Xu. S.; Bai, M.; Qi, Z.; Niu, Y.; Aung, H.; Tenne, T.; Zak, A. *; Guo, Y.*, Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system. Nature Communications, 2022, 13, 5391.
Guo, Y.; Zhang, W.; Wu, H.; Han, J.; Zhang, Y.; Lin, S.; Liu, C.; Xu, K.; Qiao, J.; Ji, W., et. al., Discovering the forbidden Raman modes at the edges of layered materials. Science Advances 2018, 4 (12), eaau6252.
Guo, Y.; Liu, C.; Yin, Q.; Wei, C.; Lin, S.; Hoffman, T. B.; Zhao, Y.; Edgar, J.; Chen, Q.; Lau, S. P., et. al.,Distinctive in-plane cleavage behaviors of two-dimensional layered materials. ACS Nano 2016, 10 (9), 8980-8988.
Guo, Y.; Han, Y.; Li, J.; Xiang, A.; Wei, X.; Gao, S.; Chen, Q., Study on the resistance distribution at the contact between molybdenum disulfide and metals. ACS Nano 2014, 8 (8), 7771-7779
Qi, Z., Mi, L., Qian, H., Zheng, W., Guo, Y.*, Chai, Y.*, Physical Reservoir Computing Based on Nanoscale Materials and Devices. Advanced Functional Materials, 2023, 2306149
Guo, Y. *; Sun, Y.; Tang, A.; Wang, C.-H.; Zhao, Y.; Bai, M.; Xu, S.; Xu, Z.; Tang, T.; Wang, S. et. al, Field-effect at electrical contacts to two-dimensional materials. Nano Research 2021, 1-7.
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Zhang, D.; Xu, S.; Xu, Z.; Qi, Z.; Niu, Y.; Yin, J.; Guo, Y.*, Programmable photovoltaics of metal-oxide-semiconductor junctions, Advanced Electronic Materials, 2022, 202200672
Bai, M.; Zhao, Y.; Xu, S.; Guo, Y.*, Asymmetric bias-induced barrier lowering as an alternative origin of current rectification in geometric diodes. Communications Physics, 2021.4, 236
Zhao, Y.; Sun, Y.; Bai, M.; Xu, S.; Wu, H.; Han, J.; Yin, H.; Guo, C.; Chen, Q.; Chai, Y., Guo Y.* Raman spectroscopy of dispersive two-dimensional materials: a systematic study on MoS2 solution. The Journal of Physical Chemistry C 2020, 124 (20), 11092-11099.
Guo, Y.; Wei, X.; Shu, J.; Liu, B.; Yin, J.; Guan, C.; Han, Y.; Gao, S.; Chen, Q., Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 2015, 106 (10), 103109.
Guo, Y.; Yin, J.; Wei, X.; Tan, Z.; Shu, J.; Liu, B.; Zeng, Y.; Gao, S.; Peng, H.; Liu, Z., Edge‐States‐Induced Disruption to the Energy Band Alignment at Thickness‐Modulated Molybdenum Sulfide Junctions. Advanced Electronic Materials 2016, 2 (8), 1600048.
Chen, Q.; Chai, Y.; Guo, Y. IEEE 3M Nano, 2021, Xi'an, China
Guo, Y.; Chen, Q. MRS Spring Meeting, 2015, San Fransisco, US
Zhang, D.; Wu, Y.; Su, Y.-H.; Hsu, M.-C.; Ó Coileáin, C.; Cho, J.; Choi, M.; Chun, B. S.; Guo, Y.; Chang, C.-R., Charge density waves and degenerate modes in exfoliated monolayer 2H-TaS2. IUCrJ 2020, 7 (5).
Liu, Y.; Li, X.; Guo, Y.; Yang, T.; Chen, K.; Lin, C.; Wei, J.; Liu, Q.; Lu, Y.; Dong, L., Modulation on the electronic properties and band gap of layered ReSe2 via strain engineering. Journal of Alloys and Compounds 2020, 827, 154364.
Shu, J.; Wu, G.; Guo, Y.; Liu, B.; Wei, X.; Chen, Q., The intrinsic origin of hysteresis in MoS 2 field effect transistors. Nanoscale 2016, 8 (5), 3049-3056.
Ning, Z.; Fu, M.; Wu, G.; Qiu, C.; Shu, J.; Guo, Y.; Wei, X.; Gao, S.; Chen, Q., Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator. Nanoscale 2016, 8 (16), 8658-8665.
Han, Y.; Zheng, X.; Fu, M.; Pan, D.; Li, X.; Guo, Y.; Zhao, J.; Chen, Q., Negative photoconductivity of InAs nanowires. Physical Chemistry Chemical Physics 2016, 18 (2), 818-826.
Shi, T.; Fu, M.; Pan, D.; Guo, Y.; Zhao, J.; Chen, Q., Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm. Nanotechnology 2015, 26 (17), 175202.
Ning, Z.; Chen, Q.; Wei, J.; Zhang, R.; Ye, L.; Wei, X.; Fu, M.; Guo, Y.; Bai, X.; Wei, F., Directly correlating the strain-induced electronic property change to the chirality of individual single-walled and few-walled carbon nanotubes. Nanoscale 2015, 7 (30), 13116-13124.
Ji, Q.; Kan, M.; Zhang, Y.; Guo, Y.; Ma, D.; Shi, J.; Sun, Q.; Chen, Q.; Zhang, Y.; Liu, Z., Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire. Nano letters 2015, 15 (1), 198-205.
Ning, Z.; Shi, T.; Fu, M.; Guo, Y.; Wei, X.; Gao, S.; Chen, Q., Transversally and axially tunable carbon nanotube resonators in situ fabricated and studied inside a scanning electron microscope. Nano letters 2014, 14 (3), 1221-1227.
Ning, Z.; Fu, M.; Shi, T.; Guo, Y.; Wei, X.; Gao, S.; Chen, Q., In situ multiproperty measurements of individual nanomaterials in SEM and correlation with their atomic structures. Nanotechnology 2014, 25 (27), 275703.
Zhang, C.; Ning, Z.; Liu, Y.; Xu, T.; Guo, Y.; Zak, A.; Zhang, Z.; Wang, S.; Tenne, R.; Chen, Q., Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption. Applied Physics Letters 2012, 101 (11), 113112.
Song, M.; Tong, L.; Liu, S; Zhang, Y.; Dong, J.; Ji Y.; Guo, Y; Wu, X.;Zhang, X.; Wang, R. Nonlinear Amplification of Chirality in Self-Assembled Plasmonic Nanostructures. ACS Nano 2021, 15, (3), 5715–5724.

Yao Guo is an Associate Professor in the School of Physics. The group welcomes self-motivated students from different backgrounds, beliefs, and cultures. From September 2010 to June 2015, he studied at the Department of Electronics, Peking University and obtained his Ph.D. From September 2015 to September 2017, he worked as an associate researcher in a joint program between the Hong Kong Polytechnic University and Stanford University. Starting in September 2017, he was an assistant professor and was promoted to associate professor at the School of Physics，Beijing Institute of Technology. His major interest is experimental research on micro-nano scale materials and devices. He has published papers in scientific journals including Science Advances, Nature Communications， ACS Nano, Nano Lett. etc.